STGP30H60DFB STMicroelectronics
auf Bestellung 744 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
73+ | 2.15 EUR |
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Technische Details STGP30H60DFB STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT, HB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 53 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/146ns, Switching Energy: 383µJ (on), 293µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 149 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Weitere Produktangebote STGP30H60DFB nach Preis ab 1.88 EUR bis 7.12 EUR
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STGP30H60DFB | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 745 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP30H60DFB | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT, HB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/146ns Switching Energy: 383µJ (on), 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
auf Bestellung 888 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP30H60DFB | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP30H60DFB | Hersteller : STMicroelectronics | IGBT Transistors Trench gate field-stop 600 V, 30 A high speed HB series IGBT |
auf Bestellung 1 Stücke: Lieferzeit 14-28 Tag (e) |
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STGP30H60DFB | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 673 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP30H60DFB | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGP30H60DFB - IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-220, 3 Pin(s) tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Kollektor-Emitter-Spannung, max.: 600V rohsCompliant: YES Verlustleistung: 260W Anzahl der Pins: 3Pin(s) euEccn: NLR Kontinuierlicher Kollektorstrom: 60A hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V Betriebstemperatur, max.: 175°C usEccn: EAR99 |
auf Bestellung 351 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP30H60DFB | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STGP30H60DFB | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STGP30H60DFB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 149nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGP30H60DFB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 149nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |