STGP30H60DFB STMicroelectronics
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 4.05 EUR |
| 61+ | 2.3 EUR |
| 100+ | 1.84 EUR |
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Technische Details STGP30H60DFB STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 53 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/146ns, Switching Energy: 383µJ (on), 293µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 149 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Weitere Produktangebote STGP30H60DFB nach Preis ab 1.36 EUR bis 4.59 EUR
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STGP30H60DFB | Hersteller : STMicroelectronics |
 Description: IGBT TRENCH FS 600V 60A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/146ns Switching Energy: 383µJ (on), 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
auf Bestellung 1862 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP30H60DFB | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP30H60DFB | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGP30H60DFB - IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-220, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 260W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: HB Kollektor-Emitter-Spannung, max.: 600V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP30H60DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-220AB Tube |
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STGP30H60DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP30H60DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP30H60DFB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 149nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |