STGP30H60DFB STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 36+ | 4.95 EUR |
| 68+ | 2.56 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.76 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
36 Stücke
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Technische Details STGP30H60DFB STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 53 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/146ns, Switching Energy: 383µJ (on), 293µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 149 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Weitere Produktangebote STGP30H60DFB nach Preis ab 1.77 EUR bis 6.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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STGP30H60DFB | STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 680 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP30H60DFB | STMicroelectronics |
IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT |
auf Bestellung 7929 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP30H60DFB | STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/146ns Switching Energy: 383µJ (on), 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
auf Bestellung 2334 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP30H60DFB | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGP30H60DFB - IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-220, 3 Pin(s)tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.55V MSL: - Verlustleistung: 260W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-220 Dauerkollektorstrom: 60A Anzahl der Pins: 3Pin(s) Produktpalette: HB Kollektor-Emitter-Spannung, max.: 600V productTraceability: No usEccn: EAR99 Betriebstemperatur, max.: 175°C |
auf Bestellung 562 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP30H60DFB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 260W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 149nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STGP30H60DFB |
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Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-220AB Tube
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 680 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 4.95 EUR |
| 68+ | 2.62 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.86 EUR |
| STGP30H60DFB |
![]() |
Hersteller: STMicroelectronics
IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
auf Bestellung 7929 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.7 EUR |
| 10+ | 3.09 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.05 EUR |
| 1000+ | 1.89 EUR |
| 2000+ | 1.83 EUR |
| 10000+ | 1.77 EUR |
| STGP30H60DFB |
![]() |
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
auf Bestellung 2334 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.18 EUR |
| 50+ | 3.08 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.25 EUR |
| 1000+ | 2.08 EUR |
| 2000+ | 1.94 EUR |
| STGP30H60DFB |
![]() |
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGP30H60DFB - IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-220, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.55V
MSL: -
Verlustleistung: 260W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220
Dauerkollektorstrom: 60A
Anzahl der Pins: 3Pin(s)
Produktpalette: HB
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Description: STMICROELECTRONICS - STGP30H60DFB - IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-220, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.55V
MSL: -
Verlustleistung: 260W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220
Dauerkollektorstrom: 60A
Anzahl der Pins: 3Pin(s)
Produktpalette: HB
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 175°C
auf Bestellung 562 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 6.59 EUR |
| 77+ | 3.03 EUR |
| 100+ | 2.52 EUR |
| 500+ | 2.05 EUR |
| STGP30H60DFB |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)





