STGP30H65DFB2 STMicroelectronics
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details STGP30H65DFB2 STMicroelectronics
Description: IGBT 600V 60A 258W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 115 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18.4ns/71ns, Switching Energy: 270µJ (on), 310µJ (off), Test Condition: 400V, 30A, 6.8Ohm, 15V, Gate Charge: 90 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 167 W.
Weitere Produktangebote STGP30H65DFB2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| STGP30H65DFB2 | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 50A 167W 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
||
| STGP30H65DFB2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| STGP30H65DFB2 | Hersteller : STMicroelectronics |
Description: IGBT 600V 60A 258W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18.4ns/71ns Switching Energy: 270µJ (on), 310µJ (off) Test Condition: 400V, 30A, 6.8Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 167 W |
Produkt ist nicht verfügbar |
||
| STGP30H65DFB2 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT |
Produkt ist nicht verfügbar |
||
| STGP30H65DFB2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube |
Produkt ist nicht verfügbar |