STGP30H65F

STGP30H65F STMicroelectronics


stgp30h65f-955920.pdf
Hersteller: STMicroelectronics
IGBT Transistors Trench gte FieldStop IGBT 600V 30A
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Technische Details STGP30H65F STMicroelectronics

Description: IGBT 650V 60A 260W TO-220AB, Power - Max: 260 W, Current - Collector (Ic) (Max): 60 A, Part Status: Obsolete, Gate Charge: 105 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Switching Energy: 350µJ (on), 400µJ (off), Td (on/off) @ 25°C: 50ns/160ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-220, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V.

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STGP30H65F STGP30H65F Hersteller : STMicroelectronics en.DM00102085.pdf Description: IGBT 650V 60A 260W TO-220AB
Power - Max: 260 W
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 105 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 350µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 50ns/160ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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