STGP30M65DF2 STMicroelectronics
auf Bestellung 1154 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.12 EUR |
| 25+ | 2.01 EUR |
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Technische Details STGP30M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31.6ns/115ns, Switching Energy: 300µJ (on), 960µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 80 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 258 W.
Weitere Produktangebote STGP30M65DF2 nach Preis ab 2.06 EUR bis 5.58 EUR
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STGP30M65DF2 | Hersteller : STMicroelectronics |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 30A; 258W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 258W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 80nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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STGP30M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 258W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 258W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 80nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP30M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 60A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31.6ns/115ns Switching Energy: 300µJ (on), 960µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 258 W |
auf Bestellung 876 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STGP30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |