STGP4M65DF2 STMICROELECTRONICS
Hersteller: STMICROELECTRONICSDescription: STMICROELECTRONICS - STGP4M65DF2 - IGBT, 8 A, 1.6 V, 68 W, 650 V, TO-220, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.6V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: TO-220
Dauerkollektorstrom: 8A
Anzahl der Pins: 3Pin(s)
Produktpalette: M
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 1751 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details STGP4M65DF2 STMICROELECTRONICS
Description: IGBT TRENCH FS 650V 8A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 133 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/86ns, Switching Energy: 40µJ (on), 136µJ (off), Test Condition: 400V, 4A, 47Ohm, 15V, Gate Charge: 15.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 16 A, Power - Max: 68 W.
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STGP4M65DF2 | Hersteller : STMicroelectronics |
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STGP4M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 8A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 133 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/86ns Switching Energy: 40µJ (on), 136µJ (off) Test Condition: 400V, 4A, 47Ohm, 15V Gate Charge: 15.2 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 16 A Power - Max: 68 W |
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Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 4A; 68W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 4A Power dissipation: 68W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: THT Gate charge: 15.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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