STGP4M65DF2 STMicroelectronics
auf Bestellung 1990 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 2.56 EUR |
| 41+ | 1.29 EUR |
| 100+ | 1.23 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.13 EUR |
| 2000+ | 1.01 EUR |
| 5000+ | 0.99 EUR |
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Technische Details STGP4M65DF2 STMicroelectronics
Description: IGBT M SERIES 650V 4A LOW LOSS, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 133 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/86ns, Switching Energy: 40µJ (on), 136µJ (off), Test Condition: 400V, 4A, 47Ohm, 15V, Gate Charge: 15.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 16 A, Power - Max: 68 W.
Weitere Produktangebote STGP4M65DF2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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STGP4M65DF2 | Hersteller : STMICROELECTRONICS |
 Description: STMICROELECTRONICS - STGP4M65DF2 - IGBT, 8 A, 1.6 V, 68 W, 650 V, TO-220, 3 Pin(s)tariffCode: 85412900 productTraceability: No Kollektor-Emitter-Spannung, max.: 650V rohsCompliant: YES Verlustleistung: 68W Anzahl der Pins: 3Pin(s) euEccn: NLR Kontinuierlicher Kollektorstrom: 8A hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V Betriebstemperatur, max.: 175°C usEccn: EAR99 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP4M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 8A 68000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STGP4M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 8A 68W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP4M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 8A 68W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP4M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 4A; 68W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 4A Power dissipation: 68W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: THT Gate charge: 15.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGP4M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT M SERIES 650V 4A LOW LOSS Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 133 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/86ns Switching Energy: 40µJ (on), 136µJ (off) Test Condition: 400V, 4A, 47Ohm, 15V Gate Charge: 15.2 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 16 A Power - Max: 68 W |
Produkt ist nicht verfügbar |
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| STGP4M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 4A; 68W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 4A Power dissipation: 68W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: THT Gate charge: 15.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |