STGP6M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: TRENCH GATE FIELD-STOP IGBT M SE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/86ns
Switching Energy: 40µJ (on), 136µJ (off)
Test Condition: 400V, 6A, 22Ohm, 15V
Gate Charge: 21.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 88 W
auf Bestellung 1884 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 3.17 EUR |
| 50+ | 2.54 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.39 EUR |
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Technische Details STGP6M65DF2 STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT M SE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/86ns, Switching Energy: 40µJ (on), 136µJ (off), Test Condition: 400V, 6A, 22Ohm, 15V, Gate Charge: 21.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 88 W.
Weitere Produktangebote STGP6M65DF2 nach Preis ab 1.25 EUR bis 3.22 EUR
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STGP6M65DF2 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss |
auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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STGP6M65DF2 | Hersteller : STMicroelectronics |
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| STGP6M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: THT Gate charge: 21.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGP6M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: THT Gate charge: 21.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |