STGP6M65DF2 STMicroelectronics
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.73 EUR |
| 10+ | 1.33 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.85 EUR |
| 2000+ | 0.75 EUR |
| 5000+ | 0.71 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGP6M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 12A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/86ns, Switching Energy: 40µJ (on), 136µJ (off), Test Condition: 400V, 6A, 22Ohm, 15V, Gate Charge: 21.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 88 W.
Weitere Produktangebote STGP6M65DF2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
STGP6M65DF2 | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 12A 88W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|
 |
STGP6M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 12A 88000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|
| STGP6M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 12A 88mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
||
 |
STGP6M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 12A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/86ns Switching Energy: 40µJ (on), 136µJ (off) Test Condition: 400V, 6A, 22Ohm, 15V Gate Charge: 21.2 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 88 W |
Produkt ist nicht verfügbar |
|
| STGP6M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: THT Gate charge: 21.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |