STGP7H60DF STMicroelectronics
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details STGP7H60DF STMicroelectronics
Description: IGBT 600V 14A 88W TO-220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 136 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/160ns, Switching Energy: 99µJ (on), 100µJ (off), Test Condition: 400V, 7A, 47Ohm, 15V, Gate Charge: 46 nC, Part Status: Active, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 28 A, Power - Max: 88 W.
Weitere Produktangebote STGP7H60DF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
|
|
STGP7H60DF | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 14A 88W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|
 |
STGP7H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 14A 88000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|
| STGP7H60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 7A; 88W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 88W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 28A Mounting: THT Gate charge: 46nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
STGP7H60DF | Hersteller : STMicroelectronics |
Description: IGBT 600V 14A 88W TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 99µJ (on), 100µJ (off) Test Condition: 400V, 7A, 47Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 28 A Power - Max: 88 W |
Produkt ist nicht verfügbar |
|
 |
STGP7H60DF | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 7 A high speed |
Produkt ist nicht verfügbar |
|
| STGP7H60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 7A; 88W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 88W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 28A Mounting: THT Gate charge: 46nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |