STGP8M120DF3 STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop, 1200 V, 8 A low loss M series IGBT
auf Bestellung 2750 Stücke:
Lieferzeit 650-664 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 12.71 EUR |
| 10+ | 10.76 EUR |
| 25+ | 10.19 EUR |
| 100+ | 8.81 EUR |
| 250+ | 8.37 EUR |
| 500+ | 7.88 EUR |
| 1000+ | 7.15 EUR |
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Technische Details STGP8M120DF3 STMicroelectronics
Description: TRENCH GATE FIELD-STOP, 1200 V,, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 103 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/126ns, Switching Energy: 390µJ (on), 370µJ (Off), Test Condition: 600V, 8A, 33Ohm, 15V, Gate Charge: 32 nC, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 32 A.
Weitere Produktangebote STGP8M120DF3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGP8M120DF3 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 16A 167000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STGP8M120DF3 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 16A 167W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP8M120DF3 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 16A 167000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP8M120DF3 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 8A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 32A Mounting: THT Gate charge: 32nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGP8M120DF3 | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP, 1200 V, Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/126ns Switching Energy: 390µJ (on), 370µJ (Off) Test Condition: 600V, 8A, 33Ohm, 15V Gate Charge: 32 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 32 A |
Produkt ist nicht verfügbar |
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| STGP8M120DF3 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 8A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 32A Mounting: THT Gate charge: 32nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |