STGPL6NC60DI STMicroelectronics
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Technische Details STGPL6NC60DI STMicroelectronics
Description: IGBT 600V 14A 56W TO-220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 23 ns, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A, Supplier Device Package: TO-220FP, Td (on/off) @ 25°C: 6.7ns/46ns, Switching Energy: 32µJ (on), 24µJ (off), Test Condition: 390V, 3A, 10Ohm, 15V, Gate Charge: 12 nC, Part Status: Active, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 56 W.
Weitere Produktangebote STGPL6NC60DI
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| STGPL6NC60DI | Hersteller : STMicroelectronics |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 6A; 56W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 56W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: THT Gate charge: 12nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGPL6NC60DI | Hersteller : STMicroelectronics |
Description: IGBT 600V 14A 56W TO-220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 23 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A Supplier Device Package: TO-220FP Td (on/off) @ 25°C: 6.7ns/46ns Switching Energy: 32µJ (on), 24µJ (off) Test Condition: 390V, 3A, 10Ohm, 15V Gate Charge: 12 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 56 W |
Produkt ist nicht verfügbar |
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| STGPL6NC60DI | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 6A; 56W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 56W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: THT Gate charge: 12nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |