STGSB200M65DF2AG STMicroelectronics
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 216A 9ACEPAK
Power - Max: 714 W
Current - Collector Pulsed (Icm): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 216 A
Part Status: Active
Gate Charge: 554 nC
Test Condition: 400V, 200A, 4.7Ohm, 15V
Switching Energy: 3.82mJ (on), 6.97mJ (off)
Td (on/off) @ 25°C: 122ns/250ns
IGBT Type: Trench Field Stop
Qualification: AEC-Q101
Grade: Automotive
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 200A
Reverse Recovery Time (trr): 174.5 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Packaging: Bulk
Supplier Device Package: 9-ACEPACK SMIT
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Technische Details STGSB200M65DF2AG STMicroelectronics
Description: IGBT TRENCH FS 650V 216A 9ACEPAK, Power - Max: 714 W, Current - Collector Pulsed (Icm): 700 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 216 A, Part Status: Active, Gate Charge: 554 nC, Test Condition: 400V, 200A, 4.7Ohm, 15V, Switching Energy: 3.82mJ (on), 6.97mJ (off), Td (on/off) @ 25°C: 122ns/250ns, IGBT Type: Trench Field Stop, Qualification: AEC-Q101, Grade: Automotive, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 200A, Reverse Recovery Time (trr): 174.5 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 9-PowerSMD, Packaging: Bulk, Supplier Device Package: 9-ACEPACK SMIT.
Weitere Produktangebote STGSB200M65DF2AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGSB200M65DF2AG | Hersteller : STMicroelectronics |
IGBTs Automotive-grade trench gate field-stop, 650 V, 200 A low-loss M series IGBT in |
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