STGSH80HB65DAG STMicroelectronics
Hersteller: STMicroelectronics
IGBT Transistors Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
| Anzahl | Preis |
|---|---|
| 1+ | 38.28 EUR |
| 10+ | 34.02 EUR |
| 25+ | 31.73 EUR |
| 50+ | 30.75 EUR |
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Technische Details STGSH80HB65DAG STMicroelectronics
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 68A, Case: ACEPACK SMIT, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 68A, Power dissipation: 250W, Pulsed collector current: 269A, Max. off-state voltage: 650V, Electrical mounting: SMT.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
| STGSH80HB65DAG | Hersteller : STMicroelectronics |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 68A Case: ACEPACK SMIT Type of semiconductor module: IGBT Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 68A Power dissipation: 250W Pulsed collector current: 269A Max. off-state voltage: 650V Electrical mounting: SMT |
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