STGW15M120DF3 STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
auf Bestellung 600 Stücke:
Lieferzeit 528-542 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 16.38 EUR |
| 10+ | 14.69 EUR |
| 100+ | 12.06 EUR |
| 250+ | 11.44 EUR |
| 600+ | 9.88 EUR |
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Technische Details STGW15M120DF3 STMicroelectronics
Description: IGBT 1200V 30A 259W, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 270 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 26ns/122ns, Switching Energy: 550µJ (on), 850µJ (off), Test Condition: 600V, 15A, 22Ohm, 15V, Gate Charge: 226 nC, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 259 W.
Weitere Produktangebote STGW15M120DF3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGW15M120DF3 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STGW15M120DF3 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 30A 259W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGW15M120DF3 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGW15M120DF3 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 259W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 53nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGW15M120DF3 | Hersteller : STMicroelectronics |
Description: IGBT 1200V 30A 259W Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 270 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/122ns Switching Energy: 550µJ (on), 850µJ (off) Test Condition: 600V, 15A, 22Ohm, 15V Gate Charge: 226 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 259 W |
Produkt ist nicht verfügbar |
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| STGW15M120DF3 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 259W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 53nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |