
STGW25H120DF2 STMicroelectronics
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
60+ | 2.46 EUR |
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Technische Details STGW25H120DF2 STMicroelectronics
Description: IGBT TRENCH FS 1200V 50A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 303 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 29ns/130ns, Switching Energy: 600µJ (on), 700µJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 100 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 375 W.
Weitere Produktangebote STGW25H120DF2 nach Preis ab 2.36 EUR bis 8.2 EUR
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STGW25H120DF2 | Hersteller : STMicroelectronics |
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auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW25H120DF2 | Hersteller : STMicroelectronics |
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auf Bestellung 1143 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW25H120DF2 | Hersteller : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 303 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 29ns/130ns Switching Energy: 600µJ (on), 700µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 375 W |
auf Bestellung 573 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW25H120DF2 | Hersteller : STMicroelectronics |
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auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW25H120DF2 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STGW25H120DF2 | Hersteller : STMicroelectronics |
![]() Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 100A Type of transistor: IGBT Collector current: 25A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.2kV Case: TO247-3 Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.1µC Power dissipation: 375W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGW25H120DF2 | Hersteller : STMicroelectronics |
![]() Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 100A Type of transistor: IGBT Collector current: 25A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.2kV Case: TO247-3 Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.1µC Power dissipation: 375W |
Produkt ist nicht verfügbar |