STGW25M120DF3 STMicroelectronics
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 12.25 EUR |
| 18+ | 8.61 EUR |
| 50+ | 7.36 EUR |
| 100+ | 6.65 EUR |
| 200+ | 6.01 EUR |
| 500+ | 5.37 EUR |
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Technische Details STGW25M120DF3 STMicroelectronics
Description: IGBT TRENCH FS 1200V 50A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 265 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 28ns/150ns, Switching Energy: 850µJ (on), 1.3mJ (off), Test Condition: 600V, 25A, 15Ohm, 15V, Gate Charge: 85 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 375 W.
Weitere Produktangebote STGW25M120DF3 nach Preis ab 8.18 EUR bis 16.56 EUR
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STGW25M120DF3 | Hersteller : STMicroelectronics |
 Description: IGBT TRENCH FS 1200V 50A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 265 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/150ns Switching Energy: 850µJ (on), 1.3mJ (off) Test Condition: 600V, 25A, 15Ohm, 15V Gate Charge: 85 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 375 W |
auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) |
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STGW25M120DF3 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss |
auf Bestellung 600 Stücke: Lieferzeit 14-28 Tag (e) |
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STGW25M120DF3 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGW25M120DF3 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 50A 375W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STGW25M120DF3 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 50A 375W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGW25M120DF3 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Type of transistor: IGBT Power dissipation: 375W Collector current: 25A Gate charge: 85nC Gate-emitter voltage: ±30V Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGW25M120DF3 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Type of transistor: IGBT Power dissipation: 375W Collector current: 25A Gate charge: 85nC Gate-emitter voltage: ±30V Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 100A |
Produkt ist nicht verfügbar |