STGW25S120DF3 STMicroelectronics
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Technische Details STGW25S120DF3 STMicroelectronics
Description: IGBT 1200V 25A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 265 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/147ns, Switching Energy: 830µJ (on), 2.37mJ (off), Test Condition: 600V, 25A, 15Ohm, 15V, Gate Charge: 80 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 375 W.
Weitere Produktangebote STGW25S120DF3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGW25S120DF3 | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 1200V 50A 375mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STGW25S120DF3 | Hersteller : STMicroelectronics |
Description: IGBT 1200V 25A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 265 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/147ns Switching Energy: 830µJ (on), 2.37mJ (off) Test Condition: 600V, 25A, 15Ohm, 15V Gate Charge: 80 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 375 W |
Produkt ist nicht verfügbar |