Technische Details STGW30M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31.6ns/115ns, Switching Energy: 300µJ (on), 960µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 80 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 258 W.
Weitere Produktangebote STGW30M65DF2 nach Preis ab 2.89 EUR bis 8.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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STGW30M65DF2 | STMicroelectronics |
 Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 343 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW30M65DF2 | STMicroelectronics |
IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss |
auf Bestellung 1922 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW30M65DF2 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGW30M65DF2 - IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 258W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: Trench M Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 545 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW30M65DF2 | STMicroelectronics |
Description: IGBT TRENCH FS 650V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31.6ns/115ns Switching Energy: 300µJ (on), 960µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 258 W |
auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGW30M65DF2 | STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STGW30M65DF2 |
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Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 343 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 343+ | 2.89 EUR |
| STGW30M65DF2 |
|
Hersteller: STMicroelectronics
IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss
IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss
auf Bestellung 1922 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.95 EUR |
| 10+ | 4.99 EUR |
| 25+ | 4.02 EUR |
| 100+ | 3.37 EUR |
| 250+ | 3.09 EUR |
| 600+ | 2.89 EUR |
| STGW30M65DF2 |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGW30M65DF2 - IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.55V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 258W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: Trench M Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 60A
SVHC: No SVHC (23-Jan-2024)
Description: STMICROELECTRONICS - STGW30M65DF2 - IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.55V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 258W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: Trench M Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 60A
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 545 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 7 EUR |
| 53+ | 4.39 EUR |
| 100+ | 3.99 EUR |
| 500+ | 3.94 EUR |
| STGW30M65DF2 |
|
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Description: IGBT TRENCH FS 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.16 EUR |
| 30+ | 4.5 EUR |
| 120+ | 3.69 EUR |
| STGW30M65DF2 |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)