STGW30M65DF2 STMicroelectronics
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 51+ | 3.11 EUR |
| 53+ | 2.87 EUR |
| 55+ | 2.66 EUR |
| 100+ | 2.47 EUR |
| 250+ | 2.3 EUR |
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Technische Details STGW30M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31.6ns/115ns, Switching Energy: 300µJ (on), 960µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 80 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 258 W.
Weitere Produktangebote STGW30M65DF2 nach Preis ab 2.66 EUR bis 7.83 EUR
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STGW30M65DF2 | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 343 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW30M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31.6ns/115ns Switching Energy: 300µJ (on), 960µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 258 W |
auf Bestellung 241 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW30M65DF2 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss |
auf Bestellung 2902 Stücke: Lieferzeit 14-28 Tag (e) |
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STGW30M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 343 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW30M65DF2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGW30M65DF2 - IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 258W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: Trench M Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 802 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGW30M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 258W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 258W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 80nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGW30M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 258W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 258W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 80nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |