| Anzahl | Preis |
|---|---|
| 1+ | 6.72 EUR |
| 10+ | 4.49 EUR |
| 100+ | 3.2 EUR |
| 600+ | 2.71 EUR |
| 1200+ | 2.69 EUR |
| 3000+ | 2.64 EUR |
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Technische Details STGW30NC60VD STMicroelectronics
Description: IGBT 600V 80A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 44 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 31ns/100ns, Switching Energy: 220µJ (on), 330µJ (off), Test Condition: 390V, 20A, 3.3Ohm, 15V, Gate Charge: 100 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 250 W.
Weitere Produktangebote STGW30NC60VD
| Foto | Bezeichnung | Hersteller | Beschreibung |
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|---|---|---|---|---|---|
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STGW30NC60VD | Hersteller : STMicroelectronics |
Description: IGBT 600V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 44 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 31ns/100ns Switching Energy: 220µJ (on), 330µJ (off) Test Condition: 390V, 20A, 3.3Ohm, 15V Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
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| STGW30NC60VD | Hersteller : STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 250W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.1µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |

