STGW35HF60WD STMicroelectronics
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Technische Details STGW35HF60WD STMicroelectronics
Description: IGBT 600V 60A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 30ns/175ns, Switching Energy: 290µJ (on), 185µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 140 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 200 W.
Weitere Produktangebote STGW35HF60WD
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STGW35HF60WD | Hersteller : STMicroelectronics |
 Description: IGBT 600V 60A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 30ns/175ns Switching Energy: 290µJ (on), 185µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 200 W |
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STGW35HF60WD | Hersteller : STMicroelectronics |
IGBTs 35 A 600 V Ultra fast IGBT |
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STGW35HF60WD | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 35A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 35A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.14µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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