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STGW35HF60WD

STGW35HF60WD STMicroelectronics


15592.pdf Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
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Technische Details STGW35HF60WD STMicroelectronics

Description: IGBT 600V 60A 200W TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 30ns/175ns, Switching Energy: 290µJ (on), 185µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 140 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 200 W.

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STGW35HF60WD STGW35HF60WD Hersteller : STMicroelectronics en.CD00231394.pdf Description: IGBT 600V 60A 200W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
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STGW35HF60WD STGW35HF60WD Hersteller : STMicroelectronics cd00231394-1928447.pdf IGBT Transistors 35 A 600 V Ultra fast IGBT
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STGW35HF60WD STGW35HF60WD Hersteller : STMicroelectronics STGW35HF60WD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 35A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 35A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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