STGW40H65DFB-4 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 650V 80A TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/142ns
Switching Energy: 200µJ (on), 410µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
auf Bestellung 538 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.64 EUR |
| 30+ | 4.86 EUR |
| 120+ | 4.04 EUR |
| 510+ | 3.43 EUR |
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Technische Details STGW40H65DFB-4 STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO-247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 62 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247-4, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/142ns, Switching Energy: 200µJ (on), 410µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 210 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 283 W.
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Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 283W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal |
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