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STGW40N120KD

STGW40N120KD STMicroelectronics


cd0022457.pdf Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 1200V 80A 240000mW 3-Pin(3+Tab) TO-247 Tube
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Technische Details STGW40N120KD STMicroelectronics

Description: IGBT 1200V 80A 240W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 125°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 84 ns, Vce(on) (Max) @ Vge, Ic: 3.85V @ 15V, 30A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 48ns/338ns, Switching Energy: 3.7mJ (on), 5.7mJ (off), Test Condition: 960V, 30A, 10Ohm, 15V, Gate Charge: 126 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 240 W.

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STGW40N120KD STGW40N120KD Hersteller : STMicroelectronics en.CD00224575.pdf Description: IGBT 1200V 80A 240W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 3.85V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 48ns/338ns
Switching Energy: 3.7mJ (on), 5.7mJ (off)
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 126 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 240 W
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STGW40N120KD STGW40N120KD Hersteller : STMicroelectronics stgw40n120kd-955987.pdf IGBT Transistors 40 A - 1200 V SC rugged IGBT
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