STGW50H60DF STMicroelectronics
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details STGW50H60DF STMicroelectronics
Description: IGBT 600V 100A 360W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 62ns/178ns, Switching Energy: 890µJ (on), 860µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 217 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 360 W.
Weitere Produktangebote STGW50H60DF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
STGW50H60DF | Hersteller : STMicroelectronics |
auf Bestellung 56 Stücke: Lieferzeit 21-28 Tag (e) |
|||
STGW50H60DF | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 600V 100A 360000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||
STGW50H60DF | Hersteller : STMicroelectronics |
Description: IGBT 600V 100A 360W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 62ns/178ns Switching Energy: 890µJ (on), 860µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 217 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 360 W |
Produkt ist nicht verfügbar |
||
STGW50H60DF | Hersteller : STMicroelectronics | IGBT Transistors 50A 600V FST IGBT Ultrafast Diode |
Produkt ist nicht verfügbar |