STGW50H65DFB2-4 STMicroelectronics
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 5.37 EUR |
| 30+ | 4.71 EUR |
| 31+ | 4.47 EUR |
| 100+ | 3.82 EUR |
| 500+ | 3.48 EUR |
| 600+ | 3.23 EUR |
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Technische Details STGW50H65DFB2-4 STMicroelectronics
Description: IGBT TRENCH FS 650V 86A TO-247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 92 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247-4, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/128ns, Switching Energy: 629µJ (on), 478µJ (off), Test Condition: 400V, 50A, 12Ohm, 15V, Gate Charge: 151 nC, Part Status: Active, Current - Collector (Ic) (Max): 86 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 272 W.
Weitere Produktangebote STGW50H65DFB2-4 nach Preis ab 3.48 EUR bis 6.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 86A 272W 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT |
auf Bestellung 570 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 86A 272000mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 86A 272mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53A; 272W; TO247-4 Case: TO247-4 Mounting: THT Type of transistor: IGBT Power dissipation: 272W Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 151nC Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 53A Pulsed collector current: 150A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 86A TO-247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247-4 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/128ns Switching Energy: 629µJ (on), 478µJ (off) Test Condition: 400V, 50A, 12Ohm, 15V Gate Charge: 151 nC Part Status: Active Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 272 W |
Produkt ist nicht verfügbar |
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| STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53A; 272W; TO247-4 Case: TO247-4 Mounting: THT Type of transistor: IGBT Power dissipation: 272W Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 151nC Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 53A Pulsed collector current: 150A |
Produkt ist nicht verfügbar |