STGW50H65DFB2-4 STMicroelectronics
Hersteller: STMicroelectronicsDescription: TRENCH GATE FIELD-STOP, 650 V, 5
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/128ns
Switching Energy: 629µJ (on), 478µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 151 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 272 W
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 8.96 EUR |
| 30+ | 8.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGW50H65DFB2-4 STMicroelectronics
Description: TRENCH GATE FIELD-STOP, 650 V, 5, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 92 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247-4, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/128ns, Switching Energy: 629µJ (on), 478µJ (off), Test Condition: 400V, 50A, 12Ohm, 15V, Gate Charge: 151 nC, Part Status: Active, Current - Collector (Ic) (Max): 86 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 272 W.
Weitere Produktangebote STGW50H65DFB2-4 nach Preis ab 3.45 EUR bis 11.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 86A 272W 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
| STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 86A 272W 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
| STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT |
auf Bestellung 600 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
| STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 86A 272000mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
| STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 86A 272mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
| STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53A; 272W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53A Power dissipation: 272W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 151nC Kind of package: tube Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| STGW50H65DFB2-4 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53A; 272W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53A Power dissipation: 272W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 151nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |