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STGW50HF60SD

STGW50HF60SD STMicroelectronics


STGW50HF60SD.pdf
Hersteller: STMicroelectronics
Description: IGBT 600V 110A TO-247-3
Power - Max: 284 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 110 A
Gate Charge: 200 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 250µJ (on), 4.2mJ (off)
Td (on/off) @ 25°C: 50ns/220ns
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A
Reverse Recovery Time (trr): 67 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details STGW50HF60SD STMicroelectronics

Description: IGBT 600V 110A TO-247-3, Power - Max: 284 W, Current - Collector Pulsed (Icm): 130 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 110 A, Gate Charge: 200 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Switching Energy: 250µJ (on), 4.2mJ (off), Td (on/off) @ 25°C: 50ns/220ns, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A, Reverse Recovery Time (trr): 67 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

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STGW50HF60SD STGW50HF60SD Hersteller : STMicroelectronics en.cd00257407-1141648.pdf IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces
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