STGW60H65DF

STGW60H65DF STMicroelectronics


dm0005168.pdf Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 350V 120A 360000mW 3-Pin(3+Tab) TO-247 Tube
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Technische Details STGW60H65DF STMicroelectronics

Description: IGBT 650V 120A 360W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 62 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 67ns/165ns, Switching Energy: 1.5mJ (on), 1.1mJ (off), Test Condition: 400V, 60A, 10Ohm, 15V, Gate Charge: 206 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 360 W.

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STGW60H65DF STGW60H65DF Hersteller : STMicroelectronics Description: IGBT 650V 120A 360W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 67ns/165ns
Switching Energy: 1.5mJ (on), 1.1mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 206 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 360 W
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STGW60H65DF STGW60H65DF Hersteller : STMicroelectronics sgsts36510_1-2282579.pdf IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
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