STGW75H65DFB2-4 STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 71A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 71A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 207nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 11.55 EUR |
| 9+ | 7.99 EUR |
| 30+ | 7.98 EUR |
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Technische Details STGW75H65DFB2-4 STMicroelectronics
Description: TRENCH GATE FIELD-STOP, 650 V, 7, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 88 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Supplier Device Package: TO-247-4, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/121ns, Switching Energy: 992µJ (on), 766µJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 207 nC, Part Status: Active, Current - Collector (Ic) (Max): 115 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 357 W.
Weitere Produktangebote STGW75H65DFB2-4 nach Preis ab 6.95 EUR bis 12.78 EUR
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STGW75H65DFB2-4 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 71A; 357W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 71A Power dissipation: 357W Case: TO247-4 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 207nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW75H65DFB2-4 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop, 650 V, 75 A, high-speed HB2 series |
auf Bestellung 640 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW75H65DFB2-4 | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP, 650 V, 7 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 88 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-4 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/121ns Switching Energy: 992µJ (on), 766µJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 207 nC Part Status: Active Current - Collector (Ic) (Max): 115 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 357 W |
auf Bestellung 53 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW75H65DFB2-4 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGW75H65DFB2-4 - IGBT, 115 A, 1.55 V, 357 W, 650 V, TO-247, 4 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 357W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: HB2 Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 115A |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGW75H65DFB2-4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 115A 357000mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGW75H65DFB2-4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 115A 357mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGW75H65DFB2-4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 115A 357W 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |