STGW75H65DFB2-4 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 71A; 357W; TO247-4
Type of transistor: IGBT
Power dissipation: 357W
Case: TO247-4
Mounting: THT
Gate charge: 207nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Gate-emitter voltage: ±30V
Collector current: 71A
Collector-emitter voltage: 650V
Pulsed collector current: 225A
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Technische Details STGW75H65DFB2-4 STMicroelectronics
Description: IGBT TRENCH FS 650V 115A TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 88 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Supplier Device Package: TO-247-4, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/121ns, Switching Energy: 992µJ (on), 766µJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 207 nC, Part Status: Active, Current - Collector (Ic) (Max): 115 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 357 W.
Weitere Produktangebote STGW75H65DFB2-4 nach Preis ab 5.74 EUR bis 15.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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STGW75H65DFB2-4 | STMicroelectronics |
IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 pac |
auf Bestellung 597 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW75H65DFB2-4 | STMicroelectronics |
Description: IGBT TRENCH FS 650V 115A TO-247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 88 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-4 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/121ns Switching Energy: 992µJ (on), 766µJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 207 nC Part Status: Active Current - Collector (Ic) (Max): 115 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 357 W |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW75H65DFB2-4 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGW75H65DFB2-4 - IGBT, 115 A, 1.55 V, 357 W, 650 V, TO-247, 4 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 357W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: HB2 Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 115A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| STGW75H65DFB2-4 | STMicroelectronics |
Trans IGBT Chip N-CH 650V 115A 357W 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGW75H65DFB2-4 | STMicroelectronics |
Trans IGBT Chip N-CH 650V 115A 357W 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGW75H65DFB2-4 |
|
Hersteller: STMicroelectronics
IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 pac
IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 pac
auf Bestellung 597 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.4 EUR |
| 10+ | 9.15 EUR |
| 600+ | 7.98 EUR |
| 1200+ | 6.68 EUR |
| STGW75H65DFB2-4 |
|
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 115A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/121ns
Switching Energy: 992µJ (on), 766µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 207 nC
Part Status: Active
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 357 W
Description: IGBT TRENCH FS 650V 115A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/121ns
Switching Energy: 992µJ (on), 766µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 207 nC
Part Status: Active
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 357 W
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.52 EUR |
| 30+ | 9.03 EUR |
| STGW75H65DFB2-4 |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGW75H65DFB2-4 - IGBT, 115 A, 1.55 V, 357 W, 650 V, TO-247, 4 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.55V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 357W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: HB2
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 115A
SVHC: No SVHC (23-Jan-2024)
Description: STMICROELECTRONICS - STGW75H65DFB2-4 - IGBT, 115 A, 1.55 V, 357 W, 650 V, TO-247, 4 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.55V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 357W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: HB2
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 115A
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| STGW75H65DFB2-4 |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 650V 115A 357W 4-Pin(4+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 115A 357W 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.59 EUR |
| 26+ | 6.31 EUR |
| 100+ | 5.74 EUR |
| STGW75H65DFB2-4 |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 650V 115A 357W 4-Pin(4+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 115A 357W 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.81 EUR |
| 26+ | 6.56 EUR |
| 100+ | 6.06 EUR |