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STGW80H65FB-4 STMicroelectronics


dm00286.pdf Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 4-Pin(4+Tab) TO-247 Tube
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Technische Details STGW80H65FB-4 STMicroelectronics

Description: IGBT BIPO 650V 80A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, Supplier Device Package: TO-247-4, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 84ns/280ns, Switching Energy: 2.1mJ (on), 1.5mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 414 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 469 W.

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STGW80H65FB-4 STGW80H65FB-4 Hersteller : STMicroelectronics en.DM00286856.pdf Description: IGBT BIPO 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
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STGW80H65FB-4 Hersteller : STMicroelectronics stgw80h65fb-4-955955.pdf IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
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