STGW8M120DF3 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 1200V 16A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/126ns
Switching Energy: 390µJ (on), 370µJ (Off)
Test Condition: 600V, 8A, 33Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 167 W
auf Bestellung 158 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.93 EUR |
| 30+ | 3.86 EUR |
| 120+ | 3.18 EUR |
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Technische Details STGW8M120DF3 STMicroelectronics
Description: IGBT TRENCH FS 1200V 16A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 103 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/126ns, Switching Energy: 390µJ (on), 370µJ (Off), Test Condition: 600V, 8A, 33Ohm, 15V, Gate Charge: 32 nC, Part Status: Active, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 32 A, Power - Max: 167 W.
Weitere Produktangebote STGW8M120DF3 nach Preis ab 2.6 EUR bis 7.04 EUR
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STGW8M120DF3 | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss |
auf Bestellung 494 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW8M120DF3 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGW8M120DF3 - IGBT, Trench-Gate, 16 A, 1.85 V, 167 W, 1.2 kV, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.85V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: M Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 16A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW8M120DF3 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 16A 167000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGW8M120DF3 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO247-3 Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Kind of package: tube Gate charge: 32nC Collector current: 8A Gate-emitter voltage: ±20V Pulsed collector current: 32A Power dissipation: 167W Collector-emitter voltage: 1.2kV Type of transistor: IGBT |
Produkt ist nicht verfügbar |