STGWA100H65DFB2 STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT
auf Bestellung 600 Stücke:
Lieferzeit 140-154 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 17.65 EUR |
| 10+ | 16.35 EUR |
| 25+ | 14.07 EUR |
| 100+ | 12.56 EUR |
| 250+ | 11.57 EUR |
| 600+ | 10.4 EUR |
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Technische Details STGWA100H65DFB2 STMicroelectronics
Description: TRENCH GATE FIELD-STOP, 650 V, 1, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 123 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/130ns, Switching Energy: 2.2mJ (on), 1.4mJ (off), Test Condition: 400V, 100A, 2.2Ohm, 15V, Gate Charge: 288 nC, Part Status: Active, Current - Collector (Ic) (Max): 145 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 441 W.
Weitere Produktangebote STGWA100H65DFB2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGWA100H65DFB2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGWA100H65DFB2 - IGBT, 145 A, 1.55 V, 441 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 441W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: HB2 Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 145A |
auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWA100H65DFB2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 145A 441000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGWA100H65DFB2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 145A 441W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGWA100H65DFB2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 91A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 288nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGWA100H65DFB2 | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP, 650 V, 1 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 123 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/130ns Switching Energy: 2.2mJ (on), 1.4mJ (off) Test Condition: 400V, 100A, 2.2Ohm, 15V Gate Charge: 288 nC Part Status: Active Current - Collector (Ic) (Max): 145 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 441 W |
Produkt ist nicht verfügbar |
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| STGWA100H65DFB2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 91A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 288nC Kind of package: tube |
Produkt ist nicht verfügbar |