STGWA100H65DFB2 STMicroelectronics
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 145A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 2.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 100A, 2.2Ohm, 15V
Gate Charge: 288 nC
Part Status: Active
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 441 W
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Technische Details STGWA100H65DFB2 STMicroelectronics
Description: IGBT TRENCH FS 650V 145A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 123 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/130ns, Switching Energy: 2.2mJ (on), 1.4mJ (off), Test Condition: 400V, 100A, 2.2Ohm, 15V, Gate Charge: 288 nC, Part Status: Active, Current - Collector (Ic) (Max): 145 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 441 W.
Weitere Produktangebote STGWA100H65DFB2 nach Preis ab 4.84 EUR bis 11.48 EUR
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STGWA100H65DFB2 | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 lon |
auf Bestellung 695 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGWA100H65DFB2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 91A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 288nC Kind of package: tube |
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