STGWA15H120DF2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 231 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/111ns
Switching Energy: 380µJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 67 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 259 W
auf Bestellung 619 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.57 EUR |
| 10+ | 5.02 EUR |
| 100+ | 3.57 EUR |
| 600+ | 2.9 EUR |
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Technische Details STGWA15H120DF2 STMicroelectronics
Description: IGBT TRENCH FS 1200V 30A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 231 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/111ns, Switching Energy: 380µJ (on), 370µJ (off), Test Condition: 600V, 15A, 10Ohm, 15V, Gate Charge: 67 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 259 W.
Weitere Produktangebote STGWA15H120DF2 nach Preis ab 3 EUR bis 7.95 EUR
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STGWA15H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3 Collector current: 15A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 67nC Mounting: THT Collector-emitter voltage: 1.2kV Type of transistor: IGBT Power dissipation: 259W Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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STGWA15H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3 Collector current: 15A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 67nC Mounting: THT Collector-emitter voltage: 1.2kV Type of transistor: IGBT Power dissipation: 259W Kind of package: tube |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGWA15H120DF2 | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop IGBT, H series 1200 V, 15 A high speed |
auf Bestellung 1190 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWA15H120DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STGWA15H120DF2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGWA15H120DF2 - IGBT, 30 A, 2.1 V, 259 W, 1.2 kV, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.1V usEccn: EAR99 euEccn: NLR Verlustleistung: 259W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: 1200V H Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 30A SVHC: No SVHC (16-Jan-2020) |
Produkt ist nicht verfügbar |
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| STGWA15H120DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 30A 259W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |