STGWA25M120DF3 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
Collector current: 25A
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 100A
Features of semiconductor devices: integrated anti-parallel diode
Power dissipation: 375W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 85nC
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Technische Details STGWA25M120DF3 STMicroelectronics
Description: IGBT TRENCH FS 1200V 50A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 265 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 28ns/150ns, Switching Energy: 850µJ (on), 1.3mJ (off), Test Condition: 600V, 25A, 15Ohm, 15V, Gate Charge: 85 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 375 W.
Weitere Produktangebote STGWA25M120DF3 nach Preis ab 3.64 EUR bis 9.45 EUR
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STGWA25M120DF3 | STMicroelectronics |
IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss |
auf Bestellung 693 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGWA25M120DF3 |
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Hersteller: STMicroelectronics
IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
auf Bestellung 693 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.45 EUR |
| 10+ | 5.32 EUR |
| 100+ | 4.4 EUR |
| 600+ | 4.21 EUR |
| 1200+ | 4.19 EUR |
| 3000+ | 3.64 EUR |