STGWA40H120DF2 STMicroelectronics
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.32 EUR |
| 10+ | 7.3 EUR |
| 25+ | 4.59 EUR |
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Technische Details STGWA40H120DF2 STMicroelectronics
Description: IGBT TRENCH FS 1200V 80A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 488 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/152ns, Switching Energy: 1mJ (on), 1.32mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 158 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 468 W.
Weitere Produktangebote STGWA40H120DF2 nach Preis ab 4.08 EUR bis 7.37 EUR
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STGWA40H120DF2 | Hersteller : STMicroelectronics |
 Description: IGBT TRENCH FS 1200V 80A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 488 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/152ns Switching Energy: 1mJ (on), 1.32mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 158 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 468 W |
auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGWA40H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3 Collector current: 40A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 158nC Mounting: THT Collector-emitter voltage: 1.2kV Type of transistor: IGBT Power dissipation: 468W Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 79 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGWA40H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3 Collector current: 40A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 158nC Mounting: THT Collector-emitter voltage: 1.2kV Type of transistor: IGBT Power dissipation: 468W Kind of package: tube |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGWA40H120DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STGWA40H120DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STGWA40H120DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 80A 468W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |