STGWA40H120DF2 STMicroelectronics
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 488 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/152ns
Switching Energy: 1mJ (on), 1.32mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 158 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 468 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 488 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/152ns
Switching Energy: 1mJ (on), 1.32mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 158 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 468 W
auf Bestellung 590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.42 EUR |
30+ | 8.32 EUR |
120+ | 7.44 EUR |
510+ | 6.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGWA40H120DF2 STMicroelectronics
Description: IGBT TRENCH FS 1200V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 488 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/152ns, Switching Energy: 1mJ (on), 1.32mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 158 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 468 W.
Weitere Produktangebote STGWA40H120DF2 nach Preis ab 8.37 EUR bis 13.75 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STGWA40H120DF2 | Hersteller : STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed |
auf Bestellung 1018 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
STGWA40H120DF2 | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
STGWA40H120DF2 | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
STGWA40H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3 Mounting: THT Power dissipation: 468W Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Kind of package: tube Pulsed collector current: 160A Type of transistor: IGBT Collector current: 40A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.2kV Gate charge: 158nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
STGWA40H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3 Mounting: THT Power dissipation: 468W Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Kind of package: tube Pulsed collector current: 160A Type of transistor: IGBT Collector current: 40A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.2kV Gate charge: 158nC |
Produkt ist nicht verfügbar |