STGWA40H65DFB2 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 230W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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Technische Details STGWA40H65DFB2 STMicroelectronics
Description: IGBT TRENCH FS 650V 72A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/72ns, Switching Energy: 765µJ (on), 410µJ (off), Test Condition: 400V, 40A, 4.7Ohm, 15V, Gate Charge: 153 nC, Part Status: Active, Current - Collector (Ic) (Max): 72 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 230 W.
Weitere Produktangebote STGWA40H65DFB2 nach Preis ab 2.45 EUR bis 7.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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STGWA40H65DFB2 | STMicroelectronics |
IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long |
auf Bestellung 550 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWA40H65DFB2 | STMicroelectronics |
Description: IGBT TRENCH FS 650V 72A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/72ns Switching Energy: 765µJ (on), 410µJ (off) Test Condition: 400V, 40A, 4.7Ohm, 15V Gate Charge: 153 nC Part Status: Active Current - Collector (Ic) (Max): 72 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 230 W |
auf Bestellung 430 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STGWA40H65DFB2 |
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Hersteller: STMicroelectronics
IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.02 EUR |
| 10+ | 3.86 EUR |
| 100+ | 2.64 EUR |
| 600+ | 2.45 EUR |
| STGWA40H65DFB2 |
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Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/72ns
Switching Energy: 765µJ (on), 410µJ (off)
Test Condition: 400V, 40A, 4.7Ohm, 15V
Gate Charge: 153 nC
Part Status: Active
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
Description: IGBT TRENCH FS 650V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/72ns
Switching Energy: 765µJ (on), 410µJ (off)
Test Condition: 400V, 40A, 4.7Ohm, 15V
Gate Charge: 153 nC
Part Status: Active
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
auf Bestellung 430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.35 EUR |
| 30+ | 4.03 EUR |
| 120+ | 3.3 EUR |



