STGWA40H65DFB2 STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 230W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 5.19 EUR |
| 23+ | 3.15 EUR |
| 25+ | 2.97 EUR |
| 120+ | 2.92 EUR |
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Technische Details STGWA40H65DFB2 STMicroelectronics
Description: IGBT TRENCH FS 650V 72A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/72ns, Switching Energy: 765µJ (on), 410µJ (off), Test Condition: 400V, 40A, 4.7Ohm, 15V, Gate Charge: 153 nC, Part Status: Active, Current - Collector (Ic) (Max): 72 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 230 W.
Weitere Produktangebote STGWA40H65DFB2 nach Preis ab 2.46 EUR bis 6.48 EUR
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STGWA40H65DFB2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 45A; 230W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 45A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 153nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWA40H65DFB2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 72A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/72ns Switching Energy: 765µJ (on), 410µJ (off) Test Condition: 400V, 40A, 4.7Ohm, 15V Gate Charge: 153 nC Part Status: Active Current - Collector (Ic) (Max): 72 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 230 W |
auf Bestellung 726 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWA40H65DFB2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGWA40H65DFB2 - IGBT, 72 A, 1.55 V, 230 W, 650 V, TO-247LL, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 230W Bauform - Transistor: TO-247LL Anzahl der Pins: 3Pin(s) Produktpalette: HB2 Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 72A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWA40H65DFB2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 72A 230000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGWA40H65DFB2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 72A 230mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STGWA40H65DFB2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 72A 230W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STGWA40H65DFB2 | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT |
Produkt ist nicht verfügbar |