STGWA40S120DF3 STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, S series 1200 V, 40 A low drop
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Technische Details STGWA40S120DF3 STMicroelectronics
Description: IGBT 1200V 40A TO247-3L, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 355 ns, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 35ns/148ns, Switching Energy: 1.43mJ (on), 3.83mJ (off), Test Condition: 600V, 40A, 15Ohm, 15V, Gate Charge: 129 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 468 W.
Weitere Produktangebote STGWA40S120DF3
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STGWA40S120DF3 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STGWA40S120DF3 | Hersteller : STMicroelectronics |
Description: IGBT 1200V 40A TO247-3L Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 355 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 35ns/148ns Switching Energy: 1.43mJ (on), 3.83mJ (off) Test Condition: 600V, 40A, 15Ohm, 15V Gate Charge: 129 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 468 W |
Produkt ist nicht verfügbar |