STGWA50H65DFB2 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 30+ | 4.86 EUR |
| 39+ | 3.6 EUR |
| 42+ | 3.23 EUR |
| 100+ | 2.55 EUR |
| 250+ | 2.31 EUR |
| 600+ | 1.93 EUR |
| 1200+ | 1.82 EUR |
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Technische Details STGWA50H65DFB2 STMicroelectronics
Description: IGBT TRENCH FS 650V 86A TO247, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 92 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 28ns/115ns, Switching Energy: 910µJ (on), 580µJ (off), Test Condition: 400V, 50A, 4.7Ohm, 15V, Gate Charge: 151 nC, Part Status: Active, Current - Collector (Ic) (Max): 86 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 272 W.
Weitere Produktangebote STGWA50H65DFB2 nach Preis ab 1.82 EUR bis 7.25 EUR
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STGWA50H65DFB2 | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 86A 272W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 8880 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWA50H65DFB2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 86A TO247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/115ns Switching Energy: 910µJ (on), 580µJ (off) Test Condition: 400V, 50A, 4.7Ohm, 15V Gate Charge: 151 nC Part Status: Active Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 272 W |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWA50H65DFB2 | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long |
auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGWA50H65DFB2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53A Power dissipation: 272W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 151nC Kind of package: tube |
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