STGWA60H65DFB STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
auf Bestellung 537 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 10.87 EUR |
| 10+ | 9.41 EUR |
| 25+ | 8.68 EUR |
| 100+ | 7.44 EUR |
| 250+ | 6.76 EUR |
| 600+ | 5.72 EUR |
| 1200+ | 5.51 EUR |
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Technische Details STGWA60H65DFB STMicroelectronics
Description: IGBT BIPO 650V 60A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 66ns/210ns, Switching Energy: 1.59mJ (on), 900µJ (off), Test Condition: 400V, 60A, 10Ohm, 15V, Gate Charge: 306 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 375 W.
Weitere Produktangebote STGWA60H65DFB
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGWA60H65DFB | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGWA60H65DFB - IGBT, 80 A, 1.6 V, 375 W, 650 V, TO-247LL, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-247LL Anzahl der Pins: 3Pin(s) Produktpalette: Trench HB Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 80A SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 590 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWA60H65DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGWA60H65DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGWA60H65DFB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGWA60H65DFB | Hersteller : STMicroelectronics |
Description: IGBT BIPO 650V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 66ns/210ns Switching Energy: 1.59mJ (on), 900µJ (off) Test Condition: 400V, 60A, 10Ohm, 15V Gate Charge: 306 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 375 W |
Produkt ist nicht verfügbar |
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| STGWA60H65DFB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |