STGWA75M65DF2 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.75 EUR |
| 19+ | 9.22 EUR |
| 27+ | 6.31 EUR |
| 100+ | 5.33 EUR |
| 250+ | 4.63 EUR |
| 600+ | 4.38 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
17 Stücke
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Produktbewertung abgeben
Technische Details STGWA75M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 165 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 47ns/125ns, Switching Energy: 690µJ (on), 2.54mJ (off), Test Condition: 400V, 75A, 3.3Ohm, 15V, Gate Charge: 225 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 468 W.
Weitere Produktangebote STGWA75M65DF2 nach Preis ab 6.78 EUR bis 13.11 EUR
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STGWA75M65DF2 | STMicroelectronics |
 IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss |
auf Bestellung 396 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWA75M65DF2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 468W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 468W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Gate charge: 225nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 225A |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STGWA75M65DF2 |
|
Hersteller: STMicroelectronics
IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss
IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss
auf Bestellung 396 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.11 EUR |
| 10+ | 11.02 EUR |
| 100+ | 8.92 EUR |
| 600+ | 7.91 EUR |
| 1200+ | 6.78 EUR |
| STGWA75M65DF2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Gate charge: 225nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 225A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Gate charge: 225nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 225A
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)