STGWA75M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 468W; TO247-3
Type of transistor: IGBT
Power dissipation: 468W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 225nC
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 7.25 EUR |
| 11+ | 6.52 EUR |
| 13+ | 5.76 EUR |
| 30+ | 5.18 EUR |
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Technische Details STGWA75M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 165 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 47ns/125ns, Switching Energy: 690µJ (on), 2.54mJ (off), Test Condition: 400V, 75A, 3.3Ohm, 15V, Gate Charge: 225 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 468 W.
Weitere Produktangebote STGWA75M65DF2 nach Preis ab 3.56 EUR bis 11.02 EUR
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STGWA75M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 468W; TO247-3 Type of transistor: IGBT Power dissipation: 468W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 225nC Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 225A Collector-emitter voltage: 650V |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWA75M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 468W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWA75M65DF2 | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss |
auf Bestellung 396 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWA75M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 468W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGWA75M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 468W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STGWA75M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 468000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STGWA75M65DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 120A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 165 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 47ns/125ns Switching Energy: 690µJ (on), 2.54mJ (off) Test Condition: 400V, 75A, 3.3Ohm, 15V Gate Charge: 225 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 468 W |
Produkt ist nicht verfügbar |