STGWA80H65DFB STMicroelectronics
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
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Technische Details STGWA80H65DFB STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 85 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 84ns/280ns, Switching Energy: 2.1mJ (on), 1.5mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 414 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 469 W.
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STGWA80H65DFB | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop 650 V, 80 A high speed HB series IGBT |
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| STGWA80H65DFB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 80A Gate-emitter voltage: ±20V Power dissipation: 470W Pulsed collector current: 300A Collector-emitter voltage: 650V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Gate charge: 414nC |
Produkt ist nicht verfügbar |