STGWA80H65DFBAG STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 650V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/360ns
Switching Energy: 3.26mJ (on), 2.33mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 453 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 535 W
Qualification: AEC-Q101
auf Bestellung 195 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.84 EUR |
| 30+ | 6.23 EUR |
| 120+ | 5.21 EUR |
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Technische Details STGWA80H65DFBAG STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 64 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/360ns, Switching Energy: 3.26mJ (on), 2.33mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 453 nC, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 535 W, Qualification: AEC-Q101.
Weitere Produktangebote STGWA80H65DFBAG nach Preis ab 5.02 EUR bis 11.04 EUR
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STGWA80H65DFBAG | Hersteller : STMicroelectronics |
IGBTs Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWA80H65DFBAG | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 535W Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
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| STGWA80H65DFBAG | Hersteller : STMicroelectronics |
Trans IGBTChip N-CH 650V 120A 535W Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
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| STGWA80H65DFBAG | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 535W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 535W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 453nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGWA80H65DFBAG | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 535W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 535W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 453nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |