STGWA80H65DFBAG STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.52 EUR |
| 10+ | 8.84 EUR |
| 30+ | 8.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGWA80H65DFBAG STMicroelectronics
Description: AUTOMOTIVE-GRADE TRENCH GATE FIE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 64 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/360ns, Switching Energy: 3.26mJ (on), 2.33mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 453 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 535 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STGWA80H65DFBAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| STGWA80H65DFBAG | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 535W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 535W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 453nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| STGWA80H65DFBAG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE TRENCH GATE FIE Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 64 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/360ns Switching Energy: 3.26mJ (on), 2.33mJ (off) Test Condition: 400V, 80A, 10Ohm, 15V Gate Charge: 453 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 535 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||
| STGWA80H65DFBAG | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 535W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 535W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 453nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |