STGWA80H65DFBAG STMicroelectronics
Hersteller: STMicroelectronics
IGBTs Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT
| Anzahl | Preis |
|---|---|
| 1+ | 9.68 EUR |
| 10+ | 5.72 EUR |
| 120+ | 4.75 EUR |
| 510+ | 4.59 EUR |
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Technische Details STGWA80H65DFBAG STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 64 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/360ns, Switching Energy: 3.26mJ (on), 2.33mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 453 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 535 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STGWA80H65DFBAG nach Preis ab 4.31 EUR bis 10.56 EUR
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STGWA80H65DFBAG | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 120A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 64 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/360ns Switching Energy: 3.26mJ (on), 2.33mJ (off) Test Condition: 400V, 80A, 10Ohm, 15V Gate Charge: 453 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 535 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 576 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWA80H65DFBAG | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 535W Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGWA80H65DFBAG | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 535W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 80A Gate-emitter voltage: ±20V Power dissipation: 535W Pulsed collector current: 240A Collector-emitter voltage: 650V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Gate charge: 453nC |
Produkt ist nicht verfügbar |