STGWT20HP65FB STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
auf Bestellung 520 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.63 EUR |
| 10+ | 5.95 EUR |
| 25+ | 5.64 EUR |
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Technische Details STGWT20HP65FB STMicroelectronics
Description: IGBT, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/139ns, Switching Energy: 170µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 120 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 168 W.
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STGWT20HP65FB | Hersteller : STMicroelectronics |
Description: IGBT Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/139ns Switching Energy: 170µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 168 W |
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