Produkte > STMICROELECTRONICS > STGWT20V60DF

STGWT20V60DF STMicroelectronics


en.DM00079434.pdf Hersteller: STMicroelectronics
STGWT20V60DF THT IGBT transistors
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details STGWT20V60DF STMicroelectronics

Description: IGBT 600V 40A 167W TO3P-3, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 38ns/149ns, Switching Energy: 200µJ (on), 130µJ (off), Test Condition: 400V, 20A, 15V, Gate Charge: 116 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 167 W.

Weitere Produktangebote STGWT20V60DF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STGWT20V60DF STGWT20V60DF Hersteller : STMicroelectronics en.DM00079434.pdf Description: IGBT 600V 40A 167W TO3P-3
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
STGWT20V60DF STGWT20V60DF Hersteller : STMicroelectronics stgb20v60df-955857.pdf IGBT Transistors 600V 20A High Speed Trench Gate IGBT
Produkt ist nicht verfügbar