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STGWT30H65FB STMicroelectronics

Name: STGWT30H65FB
Brand: STMicroelectronics
SKU: 4759076-3
Price: 5.16 EUR
Availability: InStock

Hersteller: STMicroelectronics
Description: IGBT 650V 30A 260W TO3PL
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 151µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W

auf Bestellung 464 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
4+	7.59 EUR
30+	6.02 EUR
120+	5.16 EUR

Mindestbestellmenge: 4

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Technische Details STGWT30H65FB STMicroelectronics

Description: IGBT 650V 30A 260W TO3PL, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/146ns, Switching Energy: 151µJ (on), 293µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 149 nC, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.

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Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	STGWT30H65FB	Hersteller : STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed	auf Bestellung 376 Stücke: Lieferzeit 14-28 Tag (e)