STGWT30H65FB STMicroelectronics
auf Bestellung 518 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 2.23 EUR |
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Technische Details STGWT30H65FB STMicroelectronics
Description: IGBT 650V 30A 260W TO3PL, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/146ns, Switching Energy: 151µJ (on), 293µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 149 nC, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Weitere Produktangebote STGWT30H65FB nach Preis ab 2.23 EUR bis 2.23 EUR
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STGWT30H65FB | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 60A 260W 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 518 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWT30H65FB | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed |
auf Bestellung 376 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWT30H65FB | Hersteller : STMicroelectronics |
Description: IGBT 650V 30A 260W TO3PL Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/146ns Switching Energy: 151µJ (on), 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
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