STGWT40H60DLFB STMicroelectronics
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Technische Details STGWT40H60DLFB STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/142ns, Switching Energy: 363µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 210 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 283 W.
Weitere Produktangebote STGWT40H60DLFB
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGWT40H60DLFB | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 40A 283000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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STGWT40H60DLFB | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 600V 80A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/142ns Switching Energy: 363µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 210 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 283 W |
Produkt ist nicht verfügbar |