Technische Details STGWT40H65FB STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO-3P, Power - Max: 283 W, Current - Collector Pulsed (Icm): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 80 A, Part Status: Obsolete, Gate Charge: 210 nC, Test Condition: 400V, 40A, 5Ohm, 15V, Switching Energy: 498mJ (on), 363mJ (off), Td (on/off) @ 25°C: 40ns/142ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3P, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Weitere Produktangebote STGWT40H65FB nach Preis ab 2.17 EUR bis 2.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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STGWT40H65FB | STMicroelectronics |
 Trans IGBT Chip N-CH 650V 80A 283W 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 465 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGWT40H65FB |
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Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 650V 80A 283W 3-Pin(3+Tab) TO-3P Tube
Trans IGBT Chip N-CH 650V 80A 283W 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 82+ | 2.17 EUR |