STGWT40H65FB STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT 650V 80A 283W TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/142ns
Switching Energy: 498mJ (on), 363mJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
auf Bestellung 415 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 9.85 EUR |
| 30+ | 7.79 EUR |
| 120+ | 6.68 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGWT40H65FB STMicroelectronics
Description: IGBT 650V 80A 283W TO3P-3L, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/142ns, Switching Energy: 498mJ (on), 363mJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 210 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 283 W.
Weitere Produktangebote STGWT40H65FB
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
STGWT40H65FB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
|
 |
STGWT40H65FB | Hersteller : STMicroelectronics |
IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT |
Produkt ist nicht verfügbar |