STGWT40H65FB STMicroelectronics
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 82+ | 1.8 EUR |
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Technische Details STGWT40H65FB STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/142ns, Switching Energy: 498mJ (on), 363mJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 210 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 283 W.
Weitere Produktangebote STGWT40H65FB nach Preis ab 1.8 EUR bis 1.8 EUR
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STGWT40H65FB | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 80A 283W 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 465 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWT40H65FB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube |
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STGWT40H65FB | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 80A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/142ns Switching Energy: 498mJ (on), 363mJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 210 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 283 W |
Produkt ist nicht verfügbar |
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STGWT40H65FB | Hersteller : STMicroelectronics |
IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT |
Produkt ist nicht verfügbar |