STGWT40H65FB STMicroelectronics
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO-3P
Power - Max: 283 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Obsolete
Gate Charge: 210 nC
Test Condition: 400V, 40A, 5Ohm, 15V
Switching Energy: 498mJ (on), 363mJ (off)
Td (on/off) @ 25°C: 40ns/142ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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Technische Details STGWT40H65FB STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO-3P, Power - Max: 283 W, Current - Collector Pulsed (Icm): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 80 A, Part Status: Obsolete, Gate Charge: 210 nC, Test Condition: 400V, 40A, 5Ohm, 15V, Switching Energy: 498mJ (on), 363mJ (off), Td (on/off) @ 25°C: 40ns/142ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3P, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
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STGWT40H65FB | Hersteller : STMicroelectronics |
IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT |
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