STGWT60H65DFB STMicroelectronics
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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Technische Details STGWT60H65DFB STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 51ns/160ns, Switching Energy: 1.09mJ (on), 626µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 306 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 375 W.
Weitere Produktangebote STGWT60H65DFB nach Preis ab 2.97 EUR bis 7.55 EUR
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STGWT60H65DFB | STMicroelectronics |
IGBTs 650V 60A HSpd trench gate field-stop IGBT |
auf Bestellung 287 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWT60H65DFB | STMicroelectronics |
Description: IGBT TRENCH FS 650V 80A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 51ns/160ns Switching Energy: 1.09mJ (on), 626µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 306 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 375 W |
auf Bestellung 94 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWT60H65DFB | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGWT60H65DFB - IGBT, 80 A, 1.6 V, 375 W, 650 V, TO-3P, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.6V Verlustleistung: 375W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-3P Dauerkollektorstrom: 80A Anzahl der Pins: 3Pin(s) Produktpalette: 650V HB Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 175°C |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STGWT60H65DFB |
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Hersteller: STMicroelectronics
IGBTs 650V 60A HSpd trench gate field-stop IGBT
IGBTs 650V 60A HSpd trench gate field-stop IGBT
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.22 EUR |
| 10+ | 3.87 EUR |
| 100+ | 3.31 EUR |
| 600+ | 2.97 EUR |
| STGWT60H65DFB |
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Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 51ns/160ns
Switching Energy: 1.09mJ (on), 626µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 306 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
Description: IGBT TRENCH FS 650V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 51ns/160ns
Switching Energy: 1.09mJ (on), 626µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 306 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
auf Bestellung 94 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.55 EUR |
| 30+ | 4.21 EUR |
| STGWT60H65DFB |
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Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGWT60H65DFB - IGBT, 80 A, 1.6 V, 375 W, 650 V, TO-3P, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.6V
Verlustleistung: 375W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-3P
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: 650V HB
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Description: STMICROELECTRONICS - STGWT60H65DFB - IGBT, 80 A, 1.6 V, 375 W, 650 V, TO-3P, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.6V
Verlustleistung: 375W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-3P
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: 650V HB
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)