STGWT60H65DFB STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.85 EUR |
| 12+ | 6.16 EUR |
| 16+ | 4.72 EUR |
| 17+ | 4.46 EUR |
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Technische Details STGWT60H65DFB STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 51ns/160ns, Switching Energy: 1.09mJ (on), 626µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 306 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 375 W.
Weitere Produktangebote STGWT60H65DFB nach Preis ab 3.71 EUR bis 7.64 EUR
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STGWT60H65DFB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 236 Stücke: Lieferzeit 7-14 Tag (e) |
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STGWT60H65DFB | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 80A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 51ns/160ns Switching Energy: 1.09mJ (on), 626µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 306 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 375 W |
auf Bestellung 207 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWT60H65DFB | Hersteller : STMicroelectronics |
IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT |
auf Bestellung 564 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWT60H65DFB | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGWT60H65DFB - IGBT, 80 A, 1.6 V, 375 W, 650 V, TO-3P, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-3P Anzahl der Pins: 3Pin(s) Produktpalette: 650V HB Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 80A |
auf Bestellung 261 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWT60H65DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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| STGWT60H65DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |