STGWT60V60DF STMicroelectronics
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Technische Details STGWT60V60DF STMicroelectronics
Description: IGBT TRENCH FIELD STOP 600V 80A, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 74 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 60ns/208ns, Switching Energy: 750µJ (on), 550µJ (off), Test Condition: 400V, 60A, 4.7Ohm, 15V, Gate Charge: 334 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 375 W.
Weitere Produktangebote STGWT60V60DF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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STGWT60V60DF | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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| STGWT60V60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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| STGWT60V60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 334nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGWT60V60DF | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FIELD STOP 600V 80A Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 60ns/208ns Switching Energy: 750µJ (on), 550µJ (off) Test Condition: 400V, 60A, 4.7Ohm, 15V Gate Charge: 334 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 240 A Power - Max: 375 W |
Produkt ist nicht verfügbar |
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| STGWT60V60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 334nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |