STGWT80H65DFB STMicroelectronics
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 6.60 EUR |
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Technische Details STGWT80H65DFB STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 85 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 84ns/280ns, Switching Energy: 2.1mJ (on), 1.5mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 414 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 469 W.
Weitere Produktangebote STGWT80H65DFB nach Preis ab 5.49 EUR bis 11.60 EUR
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STGWT80H65DFB | Hersteller : STMicroelectronics |
 IGBTs Trench gate H series 650V 80A HiSpd |
auf Bestellung 181 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWT80H65DFB | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 120A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 85 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 84ns/280ns Switching Energy: 2.1mJ (on), 1.5mJ (off) Test Condition: 400V, 80A, 10Ohm, 15V Gate Charge: 414 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 469 W |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWT80H65DFB | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGWT80H65DFB - IGBT, 120 A, 1.6 V, 469 W, 650 V, TO-3P, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 469W Bauform - Transistor: TO-3P Anzahl der Pins: 3Pin(s) Produktpalette: HB Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 120A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWT80H65DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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| STGWT80H65DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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| STGWT80H65DFB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 470W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 470W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 414nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGWT80H65DFB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 470W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 470W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 414nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |