STGWT80H65FB STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
auf Bestellung 258 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.63 EUR |
| 10+ | 10.47 EUR |
| 25+ | 9.89 EUR |
| 100+ | 8.57 EUR |
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Technische Details STGWT80H65FB STMicroelectronics
Description: IGBT 650V 120A 469W TO3P-3L, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 84ns/280ns, Switching Energy: 2.1mJ (on), 1.5mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 414 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 469 W.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STGWT80H65FB | Hersteller : STMicroelectronics |
STGWT80H65FB THT IGBT transistors |
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STGWT80H65FB | Hersteller : STMicroelectronics |
Description: IGBT 650V 120A 469W TO3P-3L Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 84ns/280ns Switching Energy: 2.1mJ (on), 1.5mJ (off) Test Condition: 400V, 80A, 10Ohm, 15V Gate Charge: 414 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 469 W |
Produkt ist nicht verfügbar |