STGWT80V60DF STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 11.93 EUR |
| 10+ | 10.74 EUR |
| 25+ | 10.14 EUR |
| 100+ | 8.8 EUR |
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Technische Details STGWT80V60DF STMicroelectronics
Description: IGBT 600V 120A 469W TO-3P, Power - Max: 469 W, Current - Collector Pulsed (Icm): 240 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 120 A, Gate Charge: 448 nC, Test Condition: 400V, 80A, 5Ohm, 15V, Switching Energy: 1.8mJ (on), 1mJ (off), Td (on/off) @ 25°C: 60ns/220ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3P, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A, Reverse Recovery Time (trr): 60 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGWT80V60DF | Hersteller : STMicroelectronics |
 Description: IGBT 600V 120A 469W TO-3PPower - Max: 469 W Current - Collector Pulsed (Icm): 240 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 120 A Gate Charge: 448 nC Test Condition: 400V, 80A, 5Ohm, 15V Switching Energy: 1.8mJ (on), 1mJ (off) Td (on/off) @ 25°C: 60ns/220ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3P Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A Reverse Recovery Time (trr): 60 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |