auf Bestellung 183 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.37 EUR |
| 10+ | 5.95 EUR |
| 100+ | 4.98 EUR |
| 600+ | 4.96 EUR |
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Technische Details STGY40NC60VD STMicroelectronics
Description: IGBT 600V 80A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 44 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A, Supplier Device Package: MAX247™, Td (on/off) @ 25°C: 43ns/140ns, Switching Energy: 330µJ (on), 720µJ (off), Test Condition: 390V, 40A, 3.3Ohm, 15V, Gate Charge: 214 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 260 W.
Weitere Produktangebote STGY40NC60VD nach Preis ab 4.99 EUR bis 10.42 EUR
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STGY40NC60VD | Hersteller : STMicroelectronics |
Description: IGBT 600V 80A MAX247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 44 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: MAX247™ Td (on/off) @ 25°C: 43ns/140ns Switching Energy: 330µJ (on), 720µJ (off) Test Condition: 390V, 40A, 3.3Ohm, 15V Gate Charge: 214 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 260 W |
auf Bestellung 433 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGY40NC60VD | Hersteller : STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 50A; 260W; MAX247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 260W Case: MAX247 Gate-emitter voltage: ±20V Mounting: THT Gate charge: 214nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| STGY40NC60VD | Hersteller : STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 50A; 260W; MAX247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 260W Case: MAX247 Gate-emitter voltage: ±20V Mounting: THT Gate charge: 214nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STGY40NC60VD | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 80A 260W 3-Pin(3+Tab) Max247 Tube |
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| STGY40NC60VD | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 80A 260000mW 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |
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STGY40NC60VD | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 80A 260000mW 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |


