| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.34 EUR |
| 10+ | 7.08 EUR |
| 100+ | 5.93 EUR |
| 600+ | 5.9 EUR |
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Technische Details STGY40NC60VD STMicroelectronics
Description: IGBT 600V 80A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 44 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A, Supplier Device Package: MAX247™, Td (on/off) @ 25°C: 43ns/140ns, Switching Energy: 330µJ (on), 720µJ (off), Test Condition: 390V, 40A, 3.3Ohm, 15V, Gate Charge: 214 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 260 W.
Weitere Produktangebote STGY40NC60VD nach Preis ab 6.25 EUR bis 13.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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STGY40NC60VD | STMicroelectronics |
 Description: IGBT 600V 80A MAX247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 44 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: MAX247™ Td (on/off) @ 25°C: 43ns/140ns Switching Energy: 330µJ (on), 720µJ (off) Test Condition: 390V, 40A, 3.3Ohm, 15V Gate Charge: 214 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 260 W |
auf Bestellung 278 Stücke: Lieferzeit 10-14 Tag (e) |
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STGY40NC60VD | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 260W; MAX247 Case: MAX247 Features of semiconductor devices: integrated anti-parallel diode Type of transistor: IGBT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Mounting: THT Collector-emitter voltage: 600V Power dissipation: 260W Gate charge: 214nC |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STGY40NC60VD |
|
Hersteller: STMicroelectronics
Description: IGBT 600V 80A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: MAX247™
Td (on/off) @ 25°C: 43ns/140ns
Switching Energy: 330µJ (on), 720µJ (off)
Test Condition: 390V, 40A, 3.3Ohm, 15V
Gate Charge: 214 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260 W
Description: IGBT 600V 80A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: MAX247™
Td (on/off) @ 25°C: 43ns/140ns
Switching Energy: 330µJ (on), 720µJ (off)
Test Condition: 390V, 40A, 3.3Ohm, 15V
Gate Charge: 214 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260 W
auf Bestellung 278 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.03 EUR |
| 30+ | 7.46 EUR |
| 120+ | 6.25 EUR |
| STGY40NC60VD |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 260W; MAX247
Case: MAX247
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 260W
Gate charge: 214nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 260W; MAX247
Case: MAX247
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 260W
Gate charge: 214nC
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)