STGYA120M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT NPT FS 650V 160A MAX247
Packaging: Tube
Package / Case: TO-247-3 Exposed Pad
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 202 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A
Supplier Device Package: MAX247™
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 66ns/185ns
Switching Energy: 1.8mJ (on), 4.41mJ (off)
Test Condition: 400V, 120A, 4.7Ohm, 15V
Gate Charge: 420 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 625 W
auf Bestellung 591 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.64 EUR |
| 30+ | 16.71 EUR |
| 120+ | 15.72 EUR |
| 510+ | 14.25 EUR |
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Technische Details STGYA120M65DF2 STMicroelectronics
Description: IGBT NPT FS 650V 160A MAX247, Packaging: Tube, Package / Case: TO-247-3 Exposed Pad, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 202 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A, Supplier Device Package: MAX247™, IGBT Type: NPT, Trench Field Stop, Td (on/off) @ 25°C: 66ns/185ns, Switching Energy: 1.8mJ (on), 4.41mJ (off), Test Condition: 400V, 120A, 4.7Ohm, 15V, Gate Charge: 420 nC, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 360 A, Power - Max: 625 W.
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Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 625W; MAX247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 120A Power dissipation: 625W Case: MAX247 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 420nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
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Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 625W; MAX247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 120A Power dissipation: 625W Case: MAX247 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 420nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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