STGYA120M65DF2 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 16.1 EUR |
| 10+ | 9.54 EUR |
| 100+ | 8.1 EUR |
| 600+ | 8.01 EUR |
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Technische Details STGYA120M65DF2 STMicroelectronics
Description: IGBT NPT FS 650V 160A MAX247, Packaging: Tube, Package / Case: TO-247-3 Exposed Pad, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 202 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A, Supplier Device Package: MAX247™, IGBT Type: NPT, Trench Field Stop, Td (on/off) @ 25°C: 66ns/185ns, Switching Energy: 1.8mJ (on), 4.41mJ (off), Test Condition: 400V, 120A, 4.7Ohm, 15V, Gate Charge: 420 nC, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 360 A, Power - Max: 625 W.
Weitere Produktangebote STGYA120M65DF2 nach Preis ab 14.25 EUR bis 20.64 EUR
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STGYA120M65DF2 | Hersteller : STMicroelectronics |
 Description: IGBT NPT FS 650V 160A MAX247Packaging: Tube Package / Case: TO-247-3 Exposed Pad Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 202 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A Supplier Device Package: MAX247™ IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 66ns/185ns Switching Energy: 1.8mJ (on), 4.41mJ (off) Test Condition: 400V, 120A, 4.7Ohm, 15V Gate Charge: 420 nC Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 360 A Power - Max: 625 W |
auf Bestellung 591 Stücke: Lieferzeit 10-14 Tag (e) |
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